Discover 28 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Number of Channels Operating Temperature Package / Case Supplier Device Package Mounting Type Output Type Current - Output / Channel Voltage - Output (Max) Voltage - Isolation Current - DC Forward (If) (Max) Current Transfer Ratio (Min) Current Transfer Ratio (Max) Turn On / Turn Off Time (Typ)
TLP2531(F)
Toshiba Semiconductor and Storage
5,253
3 days
-
MOQ: 1  MPQ: 1
OPTOISOLTR 2.5KV 2CH TRANS 8-DIP
Tube 2 -55°C ~ 100°C 8-DIP (0.300",7.62mm) 8-DIP Through Hole Transistor - 15V 2500Vrms 25mA 19% @ 16mA - 200ns,300ns
TLP550(F)
Toshiba Semiconductor and Storage
2,528
3 days
-
MOQ: 1  MPQ: 1
OPTOISOLATOR 2.5KV TRANS 8-DIP
Tube 1 -55°C ~ 100°C 8-DIP (0.300",7.62mm) 8-DIP Through Hole Transistor 8mA 15V 2500Vrms 25mA 10% @ 16mA - 300ns,1μs
TLP2530(F)
Toshiba Semiconductor and Storage
1,524
3 days
-
MOQ: 1  MPQ: 1
OPTOISOLTR 2.5KV 2CH TRANS 8-DIP
Tube 2 -55°C ~ 100°C 8-DIP (0.300",7.62mm) 8-DIP Through Hole Transistor - 15V 2500Vrms 25mA 7% @ 16mA - 300ns,500ns
TLP559(F)
Toshiba Semiconductor and Storage
1,047
3 days
-
MOQ: 1  MPQ: 1
OPTOISOLATOR 2.5KV TRANS 8-DIP
Tube 1 -55°C ~ 100°C 8-DIP (0.300",7.62mm) 8-DIP Through Hole Transistor 8mA 15V 2500Vrms 25mA 20% @ 16mA - 200ns,300ns
TLP559(IGM,F)
Toshiba Semiconductor and Storage
2,146
3 days
-
MOQ: 1  MPQ: 1
OPTOISOLATOR 2.5KV TRANS 8-DIP
Tube 1 -55°C ~ 100°C 8-DIP (0.300",7.62mm) 8-DIP Through Hole Transistor 8mA 20V 2500Vrms 25mA 25% @ 10mA 75% @ 10mA 450ns,450ns
6N136F
Toshiba Semiconductor and Storage
3,329
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 2.5KV TRANS W/BASE 8DIP
Tube 1 -55°C ~ 100°C 8-DIP (0.300",7.62mm) 8-DIP Through Hole Transistor with Base 8mA 15V 2500Vrms 25mA 19% @ 16mA - 200ns,500ns
6N139(F)
Toshiba Semiconductor and Storage
163
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 2.5KV DARL W/BASE 8DIP
Tube 1 0°C ~ 70°C 8-DIP (0.300",7.62mm) 8-DIP Through Hole Darlington with Base 60mA 18V 2500Vrms 20mA 500% @ 1.6mA - 200ns,1μs
TLP719(TP,F)
Toshiba Semiconductor and Storage
Inquiry
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-
MOQ: 1  MPQ: 1
OPTOISOLATOR 5KV TRANS 6-SDIP GW
Tape & Reel (TR) 1 -55°C ~ 100°C 6-SOIC (0.268",6.80mm Width) 6-SDIP Gull Wing Surface Mount Transistor 8mA 20V 5000Vrms 25mA 20% @ 16mA - 800ns,800ns (Max)
TLP719(TP,F)
Toshiba Semiconductor and Storage
307
3 days
-
MOQ: 1  MPQ: 1
OPTOISOLATOR 5KV TRANS 6-SDIP GW
Cut Tape (CT) 1 -55°C ~ 100°C 6-SOIC (0.268",6.80mm Width) 6-SDIP Gull Wing Surface Mount Transistor 8mA 20V 5000Vrms 25mA 20% @ 16mA - 800ns,800ns (Max)
TLP719(TP,F)
Toshiba Semiconductor and Storage
307
3 days
-
MOQ: 1  MPQ: 1
OPTOISOLATOR 5KV TRANS 6-SDIP GW
- 1 -55°C ~ 100°C 6-SOIC (0.268",6.80mm Width) 6-SDIP Gull Wing Surface Mount Transistor 8mA 20V 5000Vrms 25mA 20% @ 16mA - 800ns,800ns (Max)
TLP3906(TPL,E
Toshiba Semiconductor and Storage
Inquiry
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MOQ: 1  MPQ: 1
OPTOISO 3.75KV PHVOLT SO6
Tape & Reel (TR) 1 -40°C ~ 125°C 6-SOIC (0.179",4.55mm Width),4 Leads 6-SO,4 Lead Surface Mount Photovoltaic 12μA 7V 3750Vrms 30mA - - 200μs,300μs
TLP3906(TPL,E
Toshiba Semiconductor and Storage
Inquiry
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-
MOQ: 1  MPQ: 1
OPTOISO 3.75KV PHVOLT SO6
Cut Tape (CT) 1 -40°C ~ 125°C 6-SOIC (0.179",4.55mm Width),4 Leads 6-SO,4 Lead Surface Mount Photovoltaic 30μA (Typ) 7V 3750Vrms 30mA - - 200μs,300μs
TLP3906(TPL,E
Toshiba Semiconductor and Storage
Inquiry
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-
MOQ: 1  MPQ: 1
OPTOISO 3.75KV PHVOLT SO6
- 1 -40°C ~ 125°C 6-SOIC (0.179",4.55mm Width),4 Leads 6-SO,4 Lead Surface Mount Photovoltaic 12μA 7V 3750Vrms 30mA - - 200μs,300μs
6N138(TP1,F)
Toshiba Semiconductor and Storage
Inquiry
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-
MOQ: 1  MPQ: 1
OPTOISO 2.5KV DARL W/BASE 8SMD
Tape & Reel (TR) 1 0°C ~ 70°C 8-SMD,Gull Wing 8-SMD Surface Mount Darlington with Base 60mA 18V 2500Vrms 20mA 300% @ 1.6mA - 1μs,4μs
TLP3906(TPR,E
Toshiba Semiconductor and Storage
Inquiry
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-
MOQ: 1  MPQ: 1
OPTOISO 3.75KV PHVOLT SO6
Tape & Reel (TR) 1 -40°C ~ 125°C 6-SOIC (0.179",4.55mm Width),4 Leads 6-SO,4 Lead Surface Mount Photovoltaic 12μA 7V 3750Vrms 30mA - - 200μs,300μs
TLP759(TP1,J,F)
Toshiba Semiconductor and Storage
Inquiry
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MOQ: 1  MPQ: 1
PHOTOCOUPLER LOGIC 8DIP GW
Tube 1 -55°C ~ 100°C 8-DIP (0.300",7.62mm) 8-DIP Through Hole Transistor 8mA 20V 5000Vrms 25mA 20% @ 16mA - 200ns,300ns
TLP759(D4-TP1,J,F)
Toshiba Semiconductor and Storage
Inquiry
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MOQ: 1  MPQ: 1
PHOTOCOUPLER LOGIC 8DIP GW
Tube 1 -55°C ~ 100°C 8-DIP (0.300",7.62mm) 8-DIP Through Hole Transistor 8mA 20V 5000Vrms 25mA 20% @ 16mA - 200ns,300ns
TLP719(F)
Toshiba Semiconductor and Storage
Inquiry
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MOQ: 1  MPQ: 1
OPTOISOLATOR 5KV TRANS 6-SDIP GW
Tube 1 -55°C ~ 100°C 6-SOIC (0.268",6.80mm Width) 6-SDIP Gull Wing Surface Mount Transistor 8mA 20V 5000Vrms 25mA 20% @ 16mA - 800ns,800ns (Max)
TLP759(J,F)
Toshiba Semiconductor and Storage
Inquiry
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MOQ: 1  MPQ: 1
PHOTOCOUPLER LOGIC 8DIP T/H
Tube 1 -55°C ~ 100°C 8-DIP (0.300",7.62mm) 8-DIP Through Hole Transistor 8mA 20V 5000Vrms 25mA 20% @ 16mA - 200ns,300ns
TLP759(LF1,J,F)
Toshiba Semiconductor and Storage
Inquiry
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MOQ: 1  MPQ: 1
PHOTOCOUPLER LOGIC 8DIP GW
Tube 1 -55°C ~ 100°C 8-DIP (0.300",7.62mm) 8-DIP Through Hole Transistor 8mA 20V 5000Vrms 25mA 20% @ 16mA - 200ns,300ns