Series:
Part Status:
Operating Temperature:
Supplier Device Package:
Data Rate:
Common Mode Transient Immunity (Min):
Voltage - Forward (Vf) (Typ):
Current - DC Forward (If) (Max):
Discover 7 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Part Status Operating Temperature Package / Case Supplier Device Package Mounting Type Output Type Data Rate Common Mode Transient Immunity (Min) Voltage - Forward (Vf) (Typ) Current - DC Forward (If) (Max)
PC9D10
Sharp Microelectronics
Inquiry
-
-
MOQ: 1  MPQ: 1
OPTOISO 2.5KV 2CH OPEN COLL 8DIP
Tube OPIC Obsolete 0°C ~ 70°C 8-DIP (0.300",7.62mm) 8-DIP Through Hole Open Collector - 100V/μs 1.6V 15mA
TLP2631(F)
Toshiba Semiconductor and Storage
10,416
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 2.5KV 2CH OPEN COLL 8DIP
Tube - Active -40°C ~ 85°C 8-DIP (0.300",7.62mm) 8-DIP Through Hole Open Collector,Schottky Clamped 10MBd 1kV/μs 1.65V 20mA
TLP2630(F)
Toshiba Semiconductor and Storage
3,747
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 2.5KV 2CH OPEN COLL 8DIP
Tube - Active -40°C ~ 85°C 8-DIP (0.300",7.62mm) 8-DIP Through Hole Open Collector,Schottky Clamped 10MBd 200V/μs,500V/μs (Typ) 1.65V 20mA
TLP2631TP1F
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
OPTOISO 2.5KV 2CH OPEN COLL 8SMD
Tape & Reel (TR) - Active -40°C ~ 85°C 8-SMD,Gull Wing 8-SMD Surface Mount Open Collector,Schottky Clamped 10MBd 1kV/μs 1.65V 20mA
TLP2631TP1F
Toshiba Semiconductor and Storage
573
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 2.5KV 2CH OPEN COLL 8SMD
Cut Tape (CT) - Active -40°C ~ 85°C 8-SMD,Gull Wing 8-SMD Surface Mount Open Collector,Schottky Clamped 10MBd 1kV/μs 1.65V 20mA
TLP2631TP1F
Toshiba Semiconductor and Storage
573
3 days
-
MOQ: 1  MPQ: 1
OPTOISO 2.5KV 2CH OPEN COLL 8SMD
- - Active -40°C ~ 85°C 8-SMD,Gull Wing 8-SMD Surface Mount Open Collector,Schottky Clamped 10MBd 1kV/μs 1.65V 20mA
TLP2631(LF5,F)
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
X36 PB PHOTOCOUPLER SMD BULK JAP
- - Active -40°C ~ 85°C - - - Open Collector,Schottky Clamped 10MBd 1kV/μs 1.65V 20mA